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CRF-22010-001是什么作用： 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-001类似电子元器件：
- CRF-22010-001
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-101
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
CRF-22010-001 PDF资料和参数原理简介
品牌 : Cree
封装形式 :
引脚数量 : 2
温度范围 : 最小 -30 °C | 最大 120 °C
文件大小 : 157 KB
功能应用 : 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-001 PDF资料下载