F1207是什么作用： 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1207类似电子元器件：

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1207 PDF资料和参数原理简介

封装形式 :

引脚数量 : 4

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 40 KB

功能应用 : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor