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2 IRG4BC20FD-S ST780C06L0L IRFPF50 303UR120P2 SD253R08S20MSV IRF723 IRG4PC40U 305URA200 IRFP254N ST780C06L1 SD200N24MBC ST110S12P0VL ST180C04C2 305UA250P3 SD150R20MSC ST203S12MFJ0L ST173C10CHK2 ST300C18L0L ST110S12P1V SD103N16S15PSV SD300N32PBC ST203C10CHH2L SD150N20PC 301UR120P2
型号 | 品牌 | 功能应用 |
---|---|---|
SD453R25S20MTC | IR | Fast recovery diode |
IRF722 | IR | N-channel HEXFET, 400V, 2.8A |
IRG4BC20FD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A |
ST780C06L0L | IR | Phase control thyristor |
IRFPF50 | IR | HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A |
303UR120P2 | IR | Standard recovery diode |
SD253R08S20MSV | IR | Fast recovery diode |
IRF723 | IR | N-channel HEXFET, 350V, 2.8A |
IRG4PC40U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A |
305URA200 | IR | Standard recovery diode |
IRFP254N | IR | HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 125 mOhm, ID = 23 A |
ST780C06L1 | IR | Phase control thyristor |
SD200N24MBC | IR | Standard recovery diode |
ST110S12P0VL | IR | Phase control thyristor |
ST180C04C2 | IR | Phase control thyristor |
305UA250P3 | IR | Standard recovery diode |
SD150R20MSC | IR | Standard recovery diode |
ST203S12MFJ0L | IR | Inverter grade thyristor |
ST173C10CHK2 | IR | Inverter grade thyristor |
ST300C18L0L | IR | Phase control thyristor |
ST110S12P1V | IR | Phase control thyristor |
SD103N16S15PSV | IR | Fast recovery diode |
SD300N32PBC | IR | Standard recovery diode |
ST203C10CHH2L | IR | Inverter grade thyristor |
SD150N20PC | IR | Standard recovery diode |
301UR120P2 | IR | Standard recovery diode |
130HF80PBV | IR | Standard recovery diode |
IRFIZ34N | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.04 Ohm, ID = 21A |
IRF6601 | IR | Power MOSFET, 20V, 26A |
SD203R04S10PSC | IR | Fast recovery diode |