| 型号 | 品牌 | 功能应用 |
|---|
| 1N5939B | JGD | 1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. +-5% tolerance. |
| 1N755 | JGD | 500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-10% standard tolerance. |
| 1N5543C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| 3EZ82D1 | JGD | 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-1% tolerance. |
| DF10S | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
| 1N4126C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 51V. 2% tolerance. |
| 3EZ14D1 | JGD | 3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-1% tolerance. |
| 3EZ15D1 | JGD | 3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-1% tolerance. |
| 1N5930 | JGD | 1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-20% tolerance. |
| MR850 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
| 6A6 | JGD | 6.0 A silicon rectifier. Max recurrent peak reverse voltage 600 V. |
| 3EZ140D4 | JGD | 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-4% tolerance. |
| 1N5529A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
| P6KE47CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional. |
| ZMM5236C | JGD | Surface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-10% tolerance. |
| 2W08G | JGD | Single phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V. |
| P4KE91C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. Bidirectional. |
| ES1J | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 600 V. |
| 1N4755A | JGD | 1W zener diode. Zener voltage 43V. |
| SMBJ5914A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-10% tolerance. |
| 1N752 | JGD | 500mW, silicon zener diode. Zener voltage 5.6 V. Test current 20 mA. +-10% standard tolerance. |
| S3A | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A. |
| FR102L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| P4KE27A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. |
| SMAJ54CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V. Bidirectional. |
| 3EZ160D2 | JGD | 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-2% tolerance. |
| 1N961A | JGD | 0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-10% tolerance. |
| 1N986B | JGD | 0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-5% tolerance. |
| SMAJ6.5C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.5 V. Bidirectional. |
| 3EZ16D4 | JGD | 3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-4% tolerance. |
