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SAC45 MAX-422 P6KE27 SAC36 MDE-5D560K 30KW42A P6KE82 MAX20-150.0C 20KW68A 3T110B 15KW18A P6KE39A LCE8.5A MAX20-120.0CA MDE-7D680M SMDJ48A SMLJ45 MDE-34S471K 1.5KE400 SMAJ150 SMBJ110A MDE-10D221K MDE-53D951K SMDJ75A 15KP200A MAX20-6.5C SMDJ18 MAX20-8.0C
型号 | 品牌 | 功能应用 |
---|---|---|
1.5KE33 | MDE Semiconductor | 26.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
MAX40-140.0C | MDE Semiconductor | 140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SAC45 | MDE Semiconductor | 45.00V; 6.8A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
MAX-422 | MDE Semiconductor | 379.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
P6KE27 | MDE Semiconductor | 21.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SAC36 | MDE Semiconductor | 36.00V; 8.6A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
MDE-5D560K | MDE Semiconductor | 56V; max peak current250A; metal oxide varistor. Standard D series 5mm disc |
30KW42A | MDE Semiconductor | 42.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P6KE82 | MDE Semiconductor | 66.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MAX20-150.0C | MDE Semiconductor | 150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
20KW68A | MDE Semiconductor | 68.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
3T110B | MDE Semiconductor | 90V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
15KW18A | MDE Semiconductor | 18.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
P6KE39A | MDE Semiconductor | 33.30V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
LCE8.5A | MDE Semiconductor | 8.50V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
MAX20-120.0CA | MDE Semiconductor | 120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-7D680M | MDE Semiconductor | 68V; max peak current500A; metal oxide varistor. Standard D series 7mm disc |
SMDJ48A | MDE Semiconductor | 48.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMLJ45 | MDE Semiconductor | 45.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-34S471K | MDE Semiconductor | 470V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
1.5KE400 | MDE Semiconductor | 324.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
SMAJ150 | MDE Semiconductor | 150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMBJ110A | MDE Semiconductor | 110.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-10D221K | MDE Semiconductor | 220V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
MDE-53D951K | MDE Semiconductor | 950V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
SMDJ75A | MDE Semiconductor | 75.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
15KP200A | MDE Semiconductor | 200V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MAX20-6.5C | MDE Semiconductor | 6.50V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ18 | MDE Semiconductor | 18.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MAX20-8.0C | MDE Semiconductor | 8.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |