| 型号 | 品牌 | 功能应用 |
|---|
| 5962-9654201QCX | UTMC | RadHard MSI SMD. Quadruple 2-input NAND schmitt trigger. Class Q, QML. Lead finish optional. Total dose none. |
| UT80C196KDS-WCC | UTMC | 16-bit microcontroller. Lead finish gold. |
| 5962R9658001QEA | UTMC | RadHard MSI SMD. Quadruple S-R latches. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |
| 5962G9687302QXC | UTMC | Radiation-hardenet 8Kx8 PROM SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si) |
| 5962R0150202QXC | UTMC | RadHard 1750AR RISC microcontroller SMD. 16MHz, RH microcontroller. Class Q. Lead finish gold. Total dose 1E5 rads(Si). |
| 5962H9652001VCC | UTMC | RadHard MSI SMD. Triple 3-input NAND gates. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |
| 5962P0053602QUX | UTMC | 512K x 8 SRAM MCM SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
| 5962R9855202QXA | UTMC | RadHard microcontroller SMD. 16 MHz operating frequency. Class Q. Lead finish solder. Total dose 1E5 rads(Si). |
| 5962F9322604VZC | UTMC | Monolithic transceiver, 5V operation SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si). |
| 5962H9855201VYC | UTMC | RadHard microcontroller SMD. 12 MHz operating frequency. Class V. Lead finish gold. Total dose 1E6 rads(Si). |
| 5962H9689104QXX | UTMC | Radiation-hardenet 32K x 8 PROM SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 1E6 rads(Si). |
| 5962H9475401VYX | UTMC | Radiation Hardened PAL SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
| 5962R9655301VEC | UTMC | RadHard MSI SMD. Quadruple 2 to 1 multiplexer. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
| UT54ACS373PCC | UTMC | RadHard MSI. Octal transparent latch with 3-state outputs. CMOS compatible I/O level. Lead finish gold. |
| 5962R9651501QXX | UTMC | RadHard MSI SMD. Quadruple 2-input NOR gates. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |
| 5962H9656801QXX | UTMC | RadHard MSI SMD. Octal buffer w/inverted three-state output. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |
| 5962H9657001VRA | UTMC | RadHard MSI SMD. Octal buffer & line driver, three-state output. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |
| 5962L0053602TUC | UTMC | 512K x 8 SRAM MCM SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). |
| 5962F9475404VXA | UTMC | Radiation Hardened PAL SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish solder. |
| UT06MRA250 | UTMC | UT0.6uCRH/SRH commercial RadHard and strategic RadHard gate array. |
| 5962H9659001QXC | UTMC | RadHard MSI SMD. Octal D flip-flop w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |
| UT63M-125CCC | UTMC | UT63M dual multichip monolithic transceiver. +-15V, idle low. Lead finish gold. |
| 5962H0151701QXC | UTMC | Radiation-hardenet 32K x 8 PROM SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 1E6 rads(Si). |
| 5962-9659101VXA | UTMC | RadHard MSI SMD. Octal D flip-flop w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |
| UT22VP10E-20PCX | UTMC | Radiation Hardened PAL. CMOS I/O 20ns propagation delay. Lead finish optional. |
| 5962H9658101VXX | UTMC | RadHard MSI SMD. Quadruple S-R latches. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |
| 5962R9211804VYX | UTMC | RadHard enhanced SuMMIT E MIL-STD-1553 dual redundant bus controller/remote terminal monitor SMD. Device type 04. Class designator V. Lead finish optional. Radiation 1E5(100KRad). |
| UT54LVDS031-UPC | UTMC | Quad driver. Lead finish gold. Prototype flow. |
| 5962H9654801QXC | UTMC | RadHard MSI SMD. 1 of 8 data selector/multiplexer. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |
| 5962R9655601VXA | UTMC | RadHard MSI SMD. 8-bit shift register. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
