X3N173是什么作用： 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch

X3N173类似电子元器件：

X3N163
- 40 V, P-Channel enhancement mode JFET general purpose amplifier switch
X3N164
- 40 V, P-Channel enhancement mode JFET general purpose amplifier switch
X3N165
- 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier
X3N166
- 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier
X3N170
- 25 V, N-Channel enhancement mode MOSFET switch
X3N171
- 25 V, N-Channel enhancement mode MOSFET switch
X3N172
- 40 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch
X3N173
- 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch

X3N173 PDF资料和参数原理简介

品牌 : Calogic

封装形式 : SMD

引脚数量 : 4

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 36 KB

功能应用 : 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch