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54S416T-5是什么作用： High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
54S416T-5类似电子元器件：
- 54S416T-5
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
- 54S416T-6
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
- 54S416T-7
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
54S416T-5 PDF资料和参数原理简介
品牌 : Ceramate
封装形式 : TSOP
引脚数量 : 54
温度范围 : 最小 0 °C | 最大 70 °C
文件大小 : 1126 KB
功能应用 : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
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