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W4SRD0R-0D00类似电子元器件：

  • W4SRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4SRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4SRD0R-0D00 PDF资料和参数原理简介

品牌 : Cree 

封装形式 :  

引脚数量 : 0 

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 306 KB

功能应用 : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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