W6PXD3O-0000类似电子元器件:

  • W6PXD3O-0000
    • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W6PXD3O-0000 PDF资料和参数原理简介

品牌 : Cree 

封装形式 :  

引脚数量 : 0 

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 306 KB

功能应用 : Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W6PXD3O-0000 PDF资料下载