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NDH833N是什么作用： Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V
NDH833N类似电子元器件：
- NDH8301N
- Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH8303N
- Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH8304P
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- NDH831N
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- NDH8320C
- Dual N & P-Channel Enhancement Mode Field EffectTransistor [Not recommended for new designs]
- NDH8321C
- Dual N & P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH832P
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- NDH832P
- P-Channel Enhancement Mode Field Effect Transistor
NDH833N PDF资料和参数原理简介
品牌 : Fairchild
封装形式 : SuperSOT-8
引脚数量 : 0
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 243 KB
功能应用 : Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V
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