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HY51V18163HGT-6是什么作用： Dynamic RAM organized 1,048,576 words x 16bit, 60ns
HY51V18163HGT-6类似电子元器件：
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51V18163HGT-6 PDF资料和参数原理简介
品牌 : HYNIX
封装形式 : TSOP II
引脚数量 : 44
温度范围 : 最小 0 °C | 最大 70 °C
文件大小 : 117 KB
功能应用 : Dynamic RAM organized 1,048,576 words x 16bit, 60ns
HY51V18163HGT-6 PDF资料下载