导航：OK电子元器件资料网 > 电子元器件器品牌 > HYNIX Datasheet > HY57V651620BLTC-10P
HY57V651620BLTC-10P是什么作用： Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power
HY57V651620BLTC-10P类似电子元器件：
- HY57V641620HGLT-5I
- "4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz"
- HY57V658020BLTC-10P
- 4Mbit x 2 bank x 8 SDRAM, LVTTL, low power, 100MHz
- HY57V658020TC-12
- 2Mbit x 4bank x 8 SDRAM, LVTTL, 120ns
- HY57V161610DTC-8
- 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 125 MHz
- HY57V161610DTC-7I
- 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 143 MHz
- HY57V641620HGT-55
- 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 183 MHz
- HY57V658010TC-10
- 4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns
- HY57V641620HGT-7
- 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 143 MHz
HY57V651620BLTC-10P PDF资料和参数原理简介
品牌 : HYNIX
封装形式 : TSOP II
引脚数量 : 54
温度范围 : 最小 0 °C | 最大 70 °C
文件大小 : 89 KB
功能应用 : Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power
HY57V651620BLTC-10P PDF资料下载