HJ112是什么作用： Emitter to base voltage5V 4A NPN epitaxial planar transistor for use in general purpose amplifier and low-speed switching appications

HJ112类似电子元器件：

HJ1109
- Emitter to base voltage5V 100mA PNP epitaxial planar transistor
HJ112
- Emitter to base voltage5V 4A NPN epitaxial planar transistor for use in general purpose amplifier and low-speed switching appications
HJ117
- Emitter to base voltage5V 4A PNP epitaxial planar transistor for use in general purpose amplifier and low-speed switching applications

HJ112 PDF资料和参数原理简介

封装形式 : TO-252

引脚数量 : 3

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 46 KB

功能应用 : Emitter to base voltage5V 4A NPN epitaxial planar transistor for use in general purpose amplifier and low-speed switching appications