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HLB124E是什么作用： Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB124E类似电子元器件：
- HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
- HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies
HLB124E PDF资料和参数原理简介
品牌 : Hi Sincerity
封装形式 : TO-220
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 40 KB
功能应用 : Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
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