HTL294MJ是什么作用： 6V 800mA PNP epiataxial planar transistor for high voltage low power switching applications

HTL294MJ类似电子元器件：

HTL294D
- 6V 250mA PNP epiataxial planar transistor for application that requires high voltage
HTL294I
- 6V 250mA PNP epiataxial planar transistor for application that requires high voltage
HTL294J
- 6V 300mA PNP epiataxial planar transistor for application that require high voltage
HTL294MD
- 6V 400mA PNP epiataxial planar transistor for high voltage low power switching applications
HTL294MI
- 6V 400mA PNP epiataxial planar transistor fot high voltage low power switching applications
HTL294MJ
- 6V 800mA PNP epiataxial planar transistor for high voltage low power switching applications
HTL295I
- 6V 250mA PNP epiataxial planar transistor for high voltage low power switching applications

HTL294MJ PDF资料和参数原理简介

封装形式 : TO-252

引脚数量 : 3

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 31 KB

功能应用 : 6V 800mA PNP epiataxial planar transistor for high voltage low power switching applications