导航：OK电子元器件资料网 > 电子元器件器品牌 > ICSI Datasheet > IC61SF25636D-7.5BI
IC61SF25636D-7.5BI是什么作用： 7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM
IC61SF25636D-7.5BI类似电子元器件：
- IC61SP12836-117B
- 117MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
- IC61LV12816-12T
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61S6432-133TQ
- 133MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IC61SF25632T-9.5TQ
- 9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM
- IC61C256AH-12J
- 12ns; 5V; 32K x 8; high-speed CMOS static RAM
- IC61LV12816-12TI
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61LV2568-12KI
- 12ns; 3.3V; 256K x 16 high-speed CMOS static RAM
- IC61SF12832-8.5TQI
- 8.5ns; 3.3V; 128K x 32 synchronous flow-through static RAM
IC61SF25636D-7.5BI PDF资料和参数原理简介
品牌 : ICSI
封装形式 : PBGA
引脚数量 : 119
温度范围 : 最小 -40 °C | 最大 85 °C
文件大小 : 526 KB
功能应用 : 7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM
IC61SF25636D-7.5BI PDF资料下载