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IS61LV6416-10BI是什么作用： 10ns; 3.3V; 64K x 16 high-speed CMOS static RAM
IS61LV6416-10BI类似电子元器件：
- IS61LV6432-117TQI
- 117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IS61LV6432-117PQ
- 117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IS61LV12816-8TI
- 8ns; 3.3V; 128K x 16 high-speed CMOS CMOS static RAM
- IS61C632A-7TQ
- 7ns; 75MHz; 32 x 32 synchronous pipelined static RAM
- IS61LV256-15J
- 15ns; 3.3V; 32K x 8 low voltage CMOS static RAM
- IS61LV6432-7PQ
- 75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IS61LV6432-6TQ
- 83MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IS61SP6464-133TQ
- 133MHz; 3.3V; 64K x 64 synchronous pipelined static RAM
IS61LV6416-10BI PDF资料和参数原理简介
品牌 : ICSI
封装形式 : BGA
引脚数量 : 44
温度范围 : 最小 -40 °C | 最大 85 °C
文件大小 : 497 KB
功能应用 : 10ns; 3.3V; 64K x 16 high-speed CMOS static RAM
IS61LV6416-10BI PDF资料下载