导航:ok电子元器件资料网 > 电子元器件器品牌 > IR Datasheet > IR-50
0 ST180C16C3 SD300N20MBC SD203R12S10PC SD203R10S20MSC ST333C04LHK3L IRGBC40F SD253N12S20MBV SD600N08MTC IRF634S ST110S04P1L SD400R16PV SD103N25S10MSC 307UA200P5 SD203R20S15MC IRFI9640G IRFIZ34V SD200R25MC SD233N30S50MTC IRFPE40 IRF9520N 302U10A 307UR160P2 IRFY044CM SD200N24PBC ST
型号 | 品牌 | 功能应用 |
---|---|---|
SD300N16MV | IR | Standard recovery diode |
ST330C08C0 | IR | Phase control thyristor |
ST180C16C3 | IR | Phase control thyristor |
SD300N20MBC | IR | Standard recovery diode |
SD203R12S10PC | IR | Fast recovery diode |
SD203R10S20MSC | IR | Fast recovery diode |
ST333C04LHK3L | IR | Inverter grade thyristor |
IRGBC40F | IR | Insulated gate bipolar transistor |
SD253N12S20MBV | IR | Fast recovery diode |
SD600N08MTC | IR | Standard recovery diode |
IRF634S | IR | Power MOSFET, 250V, 8.1A |
ST110S04P1L | IR | Phase control thyristor |
SD400R16PV | IR | Standard recovery diode |
SD103N25S10MSC | IR | Fast recovery diode |
307UA200P5 | IR | Standard recovery diode |
SD203R20S15MC | IR | Fast recovery diode |
IRFI9640G | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -6.1 A |
IRFIZ34V | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 28mOhm, ID = 20A |
SD200R25MC | IR | Standard recovery diode |
SD233N30S50MTC | IR | Fast recovery diode |
IRFPE40 | IR | HEXFET power MOSFET. VDSS = 800 V, RDS(on) = 2.0 Ohm, ID = 5.4 A |
IRF9520N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A |
302U10A | IR | Standard recovery diode |
307UR160P2 | IR | Standard recovery diode |
IRFY044CM | IR | HEXFET power mosfet |
SD200N24PBC | IR | Standard recovery diode |
ST380CH04C2L | IR | Phase control thyristor |
ST730C14L0 | IR | Phase control thyristor |
ST223C08CHK3L | IR | Inverter grade thyristor |
309U120 | IR | Standard recovery diode |