导航:ok电子元器件资料网 > 电子元器件器品牌 > IR Datasheet > IR-61
2UFR80A IRF1405S IRF5N5210 ST180C16C2 SD1053C18S30L IRGPC20F SD203R25S10MBC SD203N08S20MBC 307UA200 SD150OC25L ST083S08PFK0 SD253N04S20MBV IRFIB7N50A 200HFR40MSV SD203N16S15MSV IRG4BC15UD-L SD300R08MSC ST330C04C0 ST183C04CHK2 IRF5850 SD500N40MSC IRHN2C50SE ST2600C20R0 SD103N04S10
型号 | 品牌 | 功能应用 |
---|---|---|
45LFR30 | IR | Standard recovery diode |
IRFY9130CM | IR | HEXFET power mosfet |
72UFR80A | IR | Standard recovery diode |
IRF1405S | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. |
IRF5N5210 | IR | HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A |
ST180C16C2 | IR | Phase control thyristor |
SD1053C18S30L | IR | Fast recovery diode |
IRGPC20F | IR | Insulated gate bipolar transistor |
SD203R25S10MBC | IR | Fast recovery diode |
SD203N08S20MBC | IR | Fast recovery diode |
307UA200 | IR | Standard recovery diode |
SD150OC25L | IR | Standard recovery diode |
ST083S08PFK0 | IR | Inverter grade thyristor |
SD253N04S20MBV | IR | Fast recovery diode |
IRFIB7N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A |
200HFR40MSV | IR | Standard recovery diode |
SD203N16S15MSV | IR | Fast recovery diode |
IRG4BC15UD-L | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A |
SD300R08MSC | IR | Standard recovery diode |
ST330C04C0 | IR | Phase control thyristor |
ST183C04CHK2 | IR | Inverter grade thyristor |
IRF5850 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm |
SD500N40MSC | IR | Standard recovery diode |
IRHN2C50SE | IR | HEXFET transistor |
ST2600C20R0 | IR | Phase control thyristor |
SD103N04S10PSC | IR | Fast recovery diode |
307UR160P5 | IR | Standard recovery diode |
300UR160AYPD | IR | Standard recovery diode |
ST330S16P1 | IR | Phase control thyristor |
IRFZ44VZL | IR | N-channel power MOSFET for fast switching applications, 60V, 57A |