IRFIB7N50A是什么作用： HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A

IRFIB7N50A类似电子元器件：

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IRFIB7N50A PDF资料和参数原理简介

品牌 : IR

封装形式 : TO-220 FULLPAK

引脚数量 : 3

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 105 KB

功能应用 : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A