导航：OK电子元器件资料网 > 电子元器件器品牌 > IR Datasheet > IRC730
IRC730是什么作用： HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
IRC730类似电子元器件：
- IRC730
- HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
- IRC740
- HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm
IRC730 PDF资料和参数原理简介
品牌 : IR
封装形式 : TO-220
引脚数量 : 5
温度范围 : 最小 -55 °C | 最大 150 °C
文件大小 : 245 KB
功能应用 : HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
IRC730 PDF资料下载