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IRF3808是什么作用： HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 140A
IRF3808类似电子元器件：
- IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3808 PDF资料和参数原理简介
品牌 : IR
封装形式 :
引脚数量 : 3
温度范围 : 最小 -55 °C | 最大 175 °C
文件大小 : 144 KB
功能应用 : HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 140A
IRF3808 PDF资料下载