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IRF5Y1310CM是什么作用： HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
IRF5Y1310CM类似电子元器件：
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5Y1310CM PDF资料和参数原理简介
品牌 : IR
封装形式 : TO-257AA
引脚数量 : 3
温度范围 : 最小 -55 °C | 最大 150 °C
文件大小 : 117 KB
功能应用 : HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
IRF5Y1310CM PDF资料下载