IRFBE30类似电子元器件:

  • IRFB11N50A
    • HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
  • IRFB13N50A
    • HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
  • IRFB18N50K
    • HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
  • IRFB23N15D
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
  • IRFB23N20D
    • HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
  • IRFB260N
    • HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
  • IRFB31N20D
    • HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
  • IRFB33N15D
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A

IRFBE30 PDF资料和参数原理简介

品牌 : IR 

封装形式 :  

引脚数量 : 3 

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 183 KB

功能应用 : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A 

IRFBE30 PDF资料下载