IRFIBE30G类似电子元器件：

IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI1010N
- HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
IRFI1310G
- HEXFET power MOSFET
IRFI260
- HEXFET transistor
IRFI3205
- "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
IRFI360
- HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
IRFI460
- HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A

IRFIBE30G PDF资料和参数原理简介

品牌 : IR

封装形式 : TO-220 FULLPAK

引脚数量 : 3

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 156 KB

功能应用 : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A