导航：OK电子元器件资料网 > 电子元器件器品牌 > IR Datasheet > IRFL9110
IRFL9110是什么作用： HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A
IRFL9110类似电子元器件：
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.16 Ohm, ID = 1.9A
- IRFL024N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.075 Ohm, ID = 2.8A
- IRFL1006
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A
- IRFL110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A
- IRFL210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.96A
- IRFL214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 0.79A
IRFL9110 PDF资料和参数原理简介
品牌 : IR
封装形式 : SOT-223
引脚数量 : 3
温度范围 : 最小 -55 °C | 最大 150 °C
文件大小 : 188 KB
功能应用 : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A
IRFL9110 PDF资料下载