FSYC360D类似电子元器件:

  • FSYC055D
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
  • FSYC055R
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
  • FSYC160R
    • Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
  • FSYC163D
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
  • FSYC163D
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
  • FSYC163R
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
  • FSYC260D
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
  • FSYC260R
    • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSYC360D PDF资料和参数原理简介

品牌 : Intersil 

封装形式 :  

引脚数量 : 0 

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 84 KB

功能应用 : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 

FSYC360D PDF资料下载