1N5391是什么作用： 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.

1N5391类似电子元器件：

1N5391
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N5391G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N5391G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N5392
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
1N5392G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
1N5393
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
1N5393G
- 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
1N5395
- 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.

1N5391 PDF资料和参数原理简介

品牌 : JGD

封装形式 : DO-15

引脚数量 : 2

温度范围 : 最小 -65 °C | 最大 125 °C

文件大小 : 161 KB

功能应用 : 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.