3EZ6.8D10是什么作用： 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-10% tolerance.

3EZ6.8D10类似电子元器件：

3EZ6.2D
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-20% tolerance.
3EZ6.2D1
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-1% tolerance.
3EZ6.2D10
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.
3EZ6.2D2
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance.
3EZ6.2D3
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance.
3EZ6.2D4
- "3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-4% tolerance."
3EZ6.2D5
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-5% tolerance.
3EZ6.8D
- 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance.

3EZ6.8D10 PDF资料和参数原理简介

品牌 : JGD

封装形式 :

引脚数量 : 2

温度范围 : 最小 -65 °C | 最大 175 °C

文件大小 : 160 KB

功能应用 : 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-10% tolerance.