30KW30类似电子元器件:

  • 30KW102
    • 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW108
    • 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW108A
    • 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW120
    • 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW132
    • 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW132A
    • 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW144
    • 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW144A
    • 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications

30KW30 PDF资料和参数原理简介

品牌 : MDE Semiconductor 

封装形式 : P-600 

引脚数量 : 2 

温度范围 : 最小 -55 °C | 最大 175 °C

文件大小 : 182 KB

功能应用 : 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 

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