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BUL52B是什么作用： Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B类似电子元器件：
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B PDF资料和参数原理简介
品牌 : Magnatec
封装形式 : TO220
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 150 °C
文件大小 : 20 KB
功能应用 : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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