BUZ906DP是什么作用： P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

BUZ906DP类似电子元器件：

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906DP PDF资料和参数原理简介

品牌 : Magnatec

封装形式 : TO-3PBL

引脚数量 : 3

温度范围 : 最小 0 °C | 最大 150 °C

文件大小 : 42 KB

功能应用 : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.