BUZ908D类似电子元器件:

  • BUZ903P
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
  • BUZ906D
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
  • BUZ902D
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ908
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ901X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ900X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ908D PDF资料和参数原理简介

品牌 : Magnatec 

封装形式 : TO-3 

引脚数量 : 2 

温度范围 : 最小 0 °C | 最大 150 °C

文件大小 : 27 KB

功能应用 : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. 

BUZ908D PDF资料下载