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MT58L512Y36DF-10是什么作用： 3.3V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns
MT58L512Y36DF-10类似电子元器件：
- MT58L1MY18DF-6
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns
- MT58L1MY18DF-7.5
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
- MT58L1MY18DT-10
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns
- MT58L1MY18DT-10
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns
- MT58L1MY18DT-6
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns
- MT58L1MY18DT-7.5
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
- MT58L512Y32DF-10
- "3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 10ns"
- MT58L512Y32DF-7.5
- 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 7.5ns
MT58L512Y36DF-10 PDF资料和参数原理简介
品牌 : Micron
封装形式 : FBGA
引脚数量 : 165
温度范围 : 最小 0 °C | 最大 70 °C
文件大小 : 578 KB
功能应用 : 3.3V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns
MT58L512Y36DF-10 PDF资料下载