V53C16258HT35是什么作用： High performance 256K x 16 EDO page mode CMOS DRAM no self refresh, 35ns

V53C16258HT35类似电子元器件：

V53C16128HT40
- High performance 128K x 16 EDO page mode CMOS dynamic RAM
V53C16128HK45
- High performance 128K x 16 EDO page mode CMOS dynamic RAM
V53C8129HK40
- Ultra-high performance 128K x 8bit fast page mode CMOS dynamic RAM
V53C16258SHT35
- High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh
V53C16128HT50
- High performance 128K x 16 EDO page mode CMOS dynamic RAM
V53C16129HK40
- High performance 128K x 16 EDO page mode CMOS dynamic RAM
V53C16258SHK46
- High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh
V53C518165A
- 1M x 16 EDO page mode CMOS dynamic RAM optional self refresh

V53C16258HT35 PDF资料和参数原理简介

封装形式 : TSOP II

引脚数量 : 40

温度范围 : 最小 0 °C | 最大 70 °C

文件大小 : 611 KB

功能应用 : High performance 256K x 16 EDO page mode CMOS DRAM no self refresh, 35ns