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MTB55N06Z是什么作用： TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z类似电子元器件：
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- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z PDF资料和参数原理简介
品牌 : Motorola
封装形式 : DPAK
引脚数量 : 4
温度范围 : 最小 -55 °C | 最大 150 °C
文件大小 : 160 KB
功能应用 : TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z PDF资料下载