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NTE6210类似电子元器件：

  • NTE60
    • Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
  • NTE6002
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6003
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6004
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6005
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6007
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
  • NTE6008
    • Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
  • NTE6009
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6210 PDF资料和参数原理简介

品牌 : NTE Electronic 

封装形式 : TO3 

引脚数量 : 2 

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 21 KB

功能应用 : Positive center tapped silicon rectifier, fast recovery. Peak repetitive reverse voltage 600V. Average forward current(per diode) 15A. 

NTE6210 PDF资料下载