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NTE630是什么作用： Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 600V. Average rectifier forward current 8A (per diode), 16A (total device).
NTE630类似电子元器件：
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE630 PDF资料和参数原理简介
品牌 : NTE Electronic
封装形式 : TO220
引脚数量 : 3
温度范围 : 最小 -65 °C | 最大 175 °C
文件大小 : 19 KB
功能应用 : Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 600V. Average rectifier forward current 8A (per diode), 16A (total device).
NTE630 PDF资料下载