导航：OK电子元器件资料网 > 电子元器件器品牌 > ON Semiconductor Datasheet > MGW21N60ED
MGW21N60ED是什么作用： Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED类似电子元器件：
- MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
- MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED PDF资料和参数原理简介
品牌 : ON Semiconductor
封装形式 : TO-247
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 167 KB
功能应用 : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED PDF资料下载