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MGY25N120D是什么作用： Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D类似电子元器件：
- MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D PDF资料和参数原理简介
品牌 : ON Semiconductor
封装形式 : TO-3PBL
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 188 KB
功能应用 : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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