1N5366B是什么作用： Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA

1N5366B类似电子元器件：

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- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
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1N5366B PDF资料和参数原理简介

品牌 : PanJit

封装形式 : DO-201AE

引脚数量 : 2

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 336 KB

功能应用 : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA