1N5399类似电子元器件:

  • 1N5348B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
  • 1N5349B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
  • 1N5350B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5352B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
  • 1N5354B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
  • 1N5355B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5399 PDF资料和参数原理简介

品牌 : PanJit 

封装形式 : D0-15 

引脚数量 : 2 

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 51 KB

功能应用 : Plastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 1.5A. 

1N5399 PDF资料下载