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1N5952B是什么作用： Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 130V. Test current Izt = 2.9 mA.
1N5952B类似电子元器件：
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- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 11V. Test current Izt = 34.1 mA.
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- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 13V. Test current Izt = 28.8 mA.
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- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 15V. Test current Izt = 25 mA.
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- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 18V. Test current Izt = 20.8 mA.
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- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 20V. Test current Izt = 18.7 mA.
- 1N5932B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 20V. Test current Izt = 18.7 mA.
1N5952B PDF资料和参数原理简介
品牌 : PanJit
封装形式 :
引脚数量 : 2
温度范围 : 最小 -55 °C | 最大 150 °C
文件大小 : 89 KB
功能应用 : Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 130V. Test current Izt = 2.9 mA.
1N5952B PDF资料下载