BSN20W是什么作用： N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA.

BSN20W类似电子元器件：

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BSN20W PDF资料和参数原理简介

品牌 : Philips

封装形式 : SOT323

引脚数量 : 3

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 0 KB

功能应用 : N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA.