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BUK555-100B是什么作用： PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B类似电子元器件：
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100B
- 100 V, power MOS transistor
- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK555-100B PDF资料和参数原理简介
品牌 : Philips
封装形式 :
引脚数量 : 3
温度范围 : 最小 -55 °C | 最大 175 °C
文件大小 : 59 KB
功能应用 : PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B PDF资料下载