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BUK555-200B是什么作用： PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
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BUK555-200B PDF资料和参数原理简介
品牌 : Philips
封装形式 : TO220AB
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 175 °C
文件大小 : 76 KB
功能应用 : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B PDF资料下载