PHW11N50E类似电子元器件:

  • PHW10N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • PowerMOS transistor. Avalancne energy rated.
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW13N40E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW14N50E
    • PowerMOS transistor. Avalanche energy rated.

PHW11N50E PDF资料和参数原理简介

品牌 : Philips 

封装形式 : SOT429 

引脚数量 : 3 

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 45 KB

功能应用 : PowerMOS transistor. Avalancne energy rated. 

PHW11N50E PDF资料下载