F1007是什么作用： Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007类似电子元器件：

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007 PDF资料和参数原理简介

封装形式 :

引脚数量 : 4

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 41 KB

功能应用 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor