F1012是什么作用： Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1012类似电子元器件：

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1012 PDF资料和参数原理简介

封装形式 :

引脚数量 : 4

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 41 KB

功能应用 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor